Effect of Growth Pressure on Structural Properties of SiC Film Grown on Insulator by Utilizing Graphene as a Buffer Layer

Author(s): Budi Astuti, Shaharin Fadzli Abd Rahman, Masahiro Tanikawa, Mohamad Rusop Mahmood, Kanji Yasui, Abdul Manaf Hashim,

Date: Jun 28, 2015

Source: Journal Of Natural Sciences And Mathematics Research

Publisher: UIN Walisongo, Universitas Islam Negeri Walisongo Semarang

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