Using molecular dynamics simulation to study the growth of Ge thin film on Si substrate
Abstract
Molecular dynamics simulations were conducted to investigate Ge thin film growth on Si substrates. The growth mode, surface morphology, and the layer coverage ratio of Ge atoms were investigated. The surface of the Ge thin film is not smooth, voids and vacancies are highly formed as the incident energy is lower than 0.1 eV. The Ge thin film grows by a layer-by-layer mode as the incident energy is raised from 0.1 eV to 0.3 eV. When the incidence energy is raised from 0.5 eV to 1.0 eV, film mixing is seen as a result of the incident atoms penetrating into several of the substrate layers. As the incident energies are raised to 10.0 eV, the sputtering mode is observed. As the temperature of the Si substrate rises from 300 K to 1000 K, under the incident energy of 0.1 eV, the layer-by-layer growth mode is still maintained, and the surfaces of the coating are quite smooth. The temperature of the Si substrate increase, and the layer coverage ratio of Ge atoms increases.
Moraref